The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 17, 2012
Filed:
Mar. 03, 2009
Masashi Shima, Kawasaki, JP;
Yosuke Shimamune, Kawasaki, JP;
Akiyoshi Hatada, Kawasaki, JP;
Akira Katakami, Kawasaki, JP;
Naoyoshi Tamura, Kawasaki, JP;
Masashi Shima, Kawasaki, JP;
Yosuke Shimamune, Kawasaki, JP;
Akiyoshi Hatada, Kawasaki, JP;
Akira Katakami, Kawasaki, JP;
Naoyoshi Tamura, Kawasaki, JP;
Fujitsu Semiconductor Limited, Yokohama, JP;
Abstract
A p-channel MOS transistor includes a gate electrode formed on a silicon substrate in correspondence to a channel region therein via a gate insulation film, the gate electrode carrying sidewall insulation films on respective sidewall surfaces thereof, and source and drain regions of p-type are formed in the substrate at respective outer sides of the sidewall insulation films, wherein each of the source and drain regions encloses a polycrystal region of p-type accumulating therein a compressive stress.