The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 28, 2011
Filed:
Feb. 02, 2010
Hiroyuki Ohta, Kawasaki, JP;
Takashi Sakuma, Kawasaki, JP;
Yosuke Shimamune, Kawasaki, JP;
Akiyoshi Hatada, Kawasaki, JP;
Akira Katakami, Kawasaki, JP;
Naoyoshi Tamura, Kawasaki, JP;
Hiroyuki Ohta, Kawasaki, JP;
Takashi Sakuma, Kawasaki, JP;
Yosuke Shimamune, Kawasaki, JP;
Akiyoshi Hatada, Kawasaki, JP;
Akira Katakami, Kawasaki, JP;
Naoyoshi Tamura, Kawasaki, JP;
Fujitsu Semiconductor Limited, Yokohama, JP;
Abstract
A method of fabricating a semiconductor device is disclosed that is able to suppress a short channel effect and improve carrier mobility. In the method, trenches are formed in a silicon substrate corresponding to a source region and a drain region. When epitaxially growing p-type semiconductor mixed crystal layers to fill up the trenches, the surfaces of the trenches are demarcated by facets, and extended portions of the semiconductor mixed crystal layers are formed between bottom surfaces of second side wall insulating films and a surface of the silicon substrate, and extended portion are in contact with a source extension region and a drain extension region.