The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 05, 2013
Filed:
Mar. 08, 2012
Masaki Haneda, Yokohama, JP;
Akiyoshi Hatada, Yokohama, JP;
Akira Katakami, Yokohama, JP;
Yuka Kase, Yokohama, JP;
Kazuya Okubo, Yokohama, JP;
Masaki Haneda, Yokohama, JP;
Akiyoshi Hatada, Yokohama, JP;
Akira Katakami, Yokohama, JP;
Yuka Kase, Yokohama, JP;
Kazuya Okubo, Yokohama, JP;
Fujitsu Semiconductor Limited, Yokohama, JP;
Abstract
A semiconductor device includes a semiconductor substrate, a device region including first and second parts, first and second gate electrodes formed in the first and the second parts, first and second source regions, first and second drain regions, first, second, third, and fourth embedded isolation film regions formed under the first source, the first drain, the second source, and the second drain regions, respectively. Further, the first drain region and the second source region form a single diffusion region, the second and the third embedded isolation film regions form a single embedded isolation film region, an opening is formed in a part of the single diffusion region so as to extend to the second and the third embedded isolation film regions, and the opening is filled with an isolation film.