The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 04, 2012
Filed:
May. 21, 2010
Applicant:
Hiroyuki Ohta, Kawasaki, JP;
Inventor:
Hiroyuki Ohta, Kawasaki, JP;
Assignee:
Fujitsu Semiconductor Limited, Yokohama, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8238 (2006.01); H01L 21/44 (2006.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor device including an n-channel MISFET including source/drain regionsformed in a semiconductor substratewith a channel region between them, and a gate electrodeof a metal silicide formed over the channel region with a gate insulating filminterposed therebetween; and an insulating filmformed over the gate electrodefrom side walls of the gate electrodeto an upper surface of the gate electrode, having a tensile stress from 1.0 to 2.0 GPa and applying the tensile stress to the channel region.