The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 12, 2011
Filed:
Jul. 25, 2006
Hidenobu Fukutome, Kawasaki, JP;
Hiroyuki Ohta, Kawasaki, JP;
Kazuo Kawamura, Kawasaki, JP;
Kimihiko Hosaka, Kawasaki, JP;
Hidenobu Fukutome, Kawasaki, JP;
Hiroyuki Ohta, Kawasaki, JP;
Kazuo Kawamura, Kawasaki, JP;
Kimihiko Hosaka, Kawasaki, JP;
Fujitsu Semiconductor Limited, Yokohama, JP;
Abstract
A method for fabricating a semiconductor device includes the steps of: forming a first MISFET including first source/drain regions and a first gate electrode of a polycrystalline silicon, and a second MISFET including second source/drain regions and a second gate electrode of a polycrystalline silicon and having a gate length larger than that of the first gate electrode; and substituting the polycrystalline silicon forming the first and the second gate electrodes with a metal silicide. In the step of substituting the polycrystalline silicon with the metal silicide, the polycrystalline silicon forming the first gate electrode is totally substituted with the metal silicide and a part of polycrystalline silicon forming the second gate electrode is substituted with the metal silicide by utilizing that the gate length of the second gate electrode is larger than the gate length of the first gate electrode.