This inventor holds 1 USPTO granted patent. Top assignee: Fujitsu Semiconductor Limited. Active years: 2011.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2011
Title: Kimihiko Hosaka: Innovator in Semiconductor Technology
Introduction
Kimihiko Hosaka is a prominent inventor based in Kawasaki, Japan. He has made significant contributions to the field of semiconductor technology. His innovative work has led to the development of a unique method for fabricating semiconductor devices.
Latest Patents
Hosaka holds a patent for a "Method for fabricating semiconductor device with fully silicided gate electrode." This method involves forming a first Metal-Insulator-Semiconductor Field-Effect Transistor (MISFET) with specific source/drain regions and a gate electrode made of polycrystalline silicon. Additionally, it includes a second MISFET with a larger gate length, where the polycrystalline silicon is substituted with metal silicide. This innovative approach enhances the performance and efficiency of semiconductor devices.
Career Highlights
Kimihiko Hosaka is associated with Fujitsu Semiconductor Limited, where he has been instrumental in advancing semiconductor fabrication techniques. His expertise in this area has positioned him as a key figure in the industry.
Collaborations
Hosaka has worked alongside notable colleagues, including Hidenobu Fukutome and Hiroyuki Ohta. Their collaborative efforts have contributed to the success of various projects within the semiconductor field.
Conclusion
Kimihiko Hosaka's contributions to semiconductor technology through his innovative patent demonstrate his expertise and commitment to advancing the industry. His work continues to influence the development of efficient semiconductor devices.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile