Hiroyoshi Ogura

Title: Hiroyoshi Ogura: Innovator in Semiconductor Technology

Introduction

Hiroyoshi Ogura is a prominent inventor based in Kyoto, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 10 patents. His work has focused on improving the performance and reliability of semiconductor devices.

Latest Patents

Ogura's latest patents include innovative designs for semiconductor devices and methods of manufacture. One notable patent describes a high withstand voltage transistor of a LOCOS offset drain type. This design features a buried layer and a plurality of stripe-shaped diffusion layers, which enhance the withstand voltage between the drain region and the buried layer. By widening the drain region, the on-resistance is reduced, and the high concentration of the buried layer effectively suppresses the operation of a parasitic bipolar transistor. Another significant patent involves a high breakdown voltage semiconductor device formed using an SOI substrate. This device includes an N-type well region and a P-type drain offset region, along with a gate insulating film and a gate electrode. The design ensures that the concentration peak of N-type impurity is located deeper than that of the P-type impurity, optimizing the device's performance.

Career Highlights

Throughout his career, Ogura has worked with notable companies such as Matsushita Electric Industrial Co., Ltd. and Panasonic Corporation. His experience in these organizations has allowed him to develop and refine his expertise in semiconductor technology.

Collaborations

Ogura has collaborated with esteemed colleagues, including Yoshinobu Sato and Teruhisa Ikuta. Their combined efforts have contributed to advancements in the semiconductor field.

Conclusion

Hiroyoshi Ogura's innovative work in semiconductor technology has led to numerous patents that enhance device performance and reliability. His contributions continue to influence the industry and pave the way for future advancements.