The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 29, 2008
Filed:
Jul. 18, 2006
Teruhisa Ikuta, Nara, JP;
Hiroyoshi Ogura, Kyoto, JP;
Yoshinobu Sato, Toyama, JP;
Toru Terashita, Toyama, JP;
Teruhisa Ikuta, Nara, JP;
Hiroyoshi Ogura, Kyoto, JP;
Yoshinobu Sato, Toyama, JP;
Toru Terashita, Toyama, JP;
Matsushita Electric Industrial, Co., Ltd., Osaka, JP;
Abstract
In a high voltage P-channel MOS transistor formed on a silicon-on-insulator (SOI) substrate, a P-type source region (), an N-type body region () and an N-body contact diffusion region () are surrounded by a P-type drain region () and a P-type drift region (). A gate electrode () is formed to overlap the end portion of the N-type body region (). The end portion of the N-type body region () has a portion in which the gate electrode () and the P-type source region () are not adjacent to each other.