The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 02, 2007

Filed:

Jun. 28, 2005
Applicants:

Hiroyoshi Ogura, Kyoto, JP;

Hisao Ichijo, Soraku-gun, JP;

Yoshinobu Sato, Takatsuki, JP;

Teruhisa Ikuta, Ikoma, JP;

Inventors:

Hiroyoshi Ogura, Kyoto, JP;

Hisao Ichijo, Soraku-gun, JP;

Yoshinobu Sato, Takatsuki, JP;

Teruhisa Ikuta, Ikoma, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 31/062 (2006.01);
U.S. Cl.
CPC ...
Abstract

A gate electrode has an end extended over a part of a LOCOS oxide film, and a source electrode has an end extended further than the end of the gate electrode over a part of the LOCOS oxide film. An insulating film covering the gate electrode and the LOCOS oxide film is formed such that the thickness of the insulating film at an end-portion region, which is on an end portion of the gate electrode provided to extend over a part of the LOCOS oxide film, as viewed from a main surface of a supporting substrate, is smaller than the thickness of the insulating film below an end portion of the source electrode above the drain region and smaller than the thickness of the insulating film on an end portion of the gate electrode above a body region.


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