Hisao Ichijo

Title: Hisao Ichijo: Innovator in Semiconductor Technology

Introduction

Hisao Ichijo is a prominent inventor based in Kyoto, Japan, known for his significant contributions to semiconductor technology. With a total of 6 patents to his name, Ichijo has made remarkable advancements in the field, particularly in high breakdown voltage semiconductor devices.

Latest Patents

Ichijo's latest patents include a high breakdown voltage semiconductor device and its fabrication method. This innovative device is constructed using a silicon-on-insulator (SOI) substrate, which consists of a support substrate, an insulating film, and an active layer. The device features an N-type well region and a P-type drain offset region on the active layer, along with a P-type source region and a P-type drain region. A gate insulating film is interposed between the source region and the drain offset region, topped with a gate electrode. Additionally, an N-type deep well region is formed beneath the drain offset region, ensuring optimal performance. Another notable patent involves a semiconductor device that includes a conductive bonding pad on a semiconductor substrate, designed to maintain its characteristics even during breakdown events.

Career Highlights

Throughout his career, Ichijo has worked with notable companies such as Matsushita Electric Industrial Co., Ltd. and Panasonic Corporation. His experience in these leading organizations has allowed him to refine his expertise in semiconductor technology and contribute to various innovative projects.

Collaborations

Ichijo has collaborated with esteemed colleagues, including Hiroyoshi Ogura and Yoshinobu Sato. These partnerships have further enhanced his work and led to significant advancements in the semiconductor field.

Conclusion

Hisao Ichijo's contributions to semiconductor technology through his patents and collaborations highlight his role as an influential inventor. His work continues to impact the industry, paving the way for future innovations in semiconductor devices.