The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 26, 2011
Filed:
May. 24, 2007
Akira Ohdaira, Toyama, JP;
Hisaji Nishimura, Toyama, JP;
Hiroyoshi Ogura, Toyama, JP;
Panasonic Corporation, Osaka, JP;
Abstract
In a high withstand voltage transistor of a LOCOS offset drain type having a buried layer, a plurality of stripe-shaped diffusion layers are formed below a diffusion layer ranging from an offset layer to a drain layer and a portion between the drain region and the buried layer is depleted completely; thus, a withstand voltage between the drain region and the buried layer is improved. By the formation of the stripe-shaped diffusion layers, the drain region becomes widened; thus, on-resistance is reduced. Further, the buried layer is made high in concentration so as to sufficiently suppress an operation of a parasitic bipolar transistor.