Hyogo, Japan

Hirotada Kuriyama

This inventor holds 42 USPTO granted patents, primarily in Semiconductor Devices. Top assignees: Mitsubishi Denki Kabushiki Kaisha, Renesas Technology Corp.. Active years: 1989-2008.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hirotada Kuriyama. Retrieved from https://idiyas.com/inventor/hirotada-kuriyama

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 88.1

Average Co-Inventor Count = 2.2

ph-index = 15

Forward Citations = 846(Granted Patents)


Location History:

  • Hyogo-ken, JP (1996)
  • Itami, JP (1996)
  • Hyogo, JP (1989 - 2005)
  • Tokyo, JP (2002 - 2008)

Company Filing History:


Years Active: 1989-2008

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Areas of Expertise:
Thin-Film Transistor
Semiconductor Device
SRAM Memory
Non-Volatile Memory
Static Memory Device
Memory Cell Region
Thermal Neutron Absorption
High-Speed Operation
Vertical Surround Gate
Integrated Device
Manufacturing Method
42 patents (USPTO):Explore Patents

Title: Hirotada Kuriyama: Innovator in Thin-Film Transistor Technology

Introduction

Hirotada Kuriyama, an accomplished inventor based in Hyogo, Japan, has made significant contributions to the field of semiconductor technology. With an impressive portfolio of 42 patents, Kuriyama stands out for his work in the development of thin-film transistors, which play a vital role in modern electronics.

Latest Patents

Among his recent innovations, Kuriyama has developed a patented method for fabricating thin-film transistors that integrates polysilicon layers of varying conductivity types. This design effectively mitigates issues caused by the diffusion of impurities during the manufacturing process. The innovative technique involves creating a drain, a channel, and a source on a second oxide film, where these components are made from polysilicon. Notably, the drain connects with a pad layer through a contact hole that reaches the upper surface of the pad layer, which includes a boron implantation region. This method enhances the performance and reliability of thin-film transistors.

Career Highlights

Hirotada Kuriyama's career includes pivotal roles at leading technology companies such as Mitsubishi Electric Corporation and Renesas Technology Corporation. His expertise in semiconductor technology has been instrumental in advancing their product offerings and capabilities.

Collaborations

Throughout his career, Kuriyama has collaborated with notable coworkers, including Shigenobu Maeda and Shigeto Maegawa. These partnerships have fostered a creative exchange of ideas and innovations, contributing to the success of their projects and further enhancing the field of semiconductor technology.

Conclusion

Hirotada Kuriyama is a prominent figure in the domain of thin-film transistors, driven by a passion for innovation and a commitment to advancing technology. His numerous patents reflect a legacy of creativity and influence within the semiconductor industry, inspiring future generations of inventors and engineers.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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