The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 19, 2002
Filed:
Oct. 06, 1998
Applicant:
Inventors:
Hirotada Kuriyama, Hyogo, JP;
Shigenobu Maeda, Hyogo, JP;
Assignee:
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 1/100 ;
U.S. Cl.
CPC ...
G11C 1/100 ;
Abstract
A memory cell includes an n well and a p well. A word line is provided over memory cell and n well and p well are arranged in a direction in which word line extends. A single word line is provided for each memory cell and formed of metal.
Kuriyama, Hirotada. (2002). Static semiconductor memory cell formed in an n-well and p-well (U.S. Patent No. 6359804). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6359804
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile