The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 31, 2002
Filed:
Feb. 04, 1997
Hirotada Kuriyama, Tokyo, JP;
Kazuhito Tsutsumi, Tokyo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
In a semiconductor device, a first conductive layer ( ) is located on a semiconductor substrate ( ) through an insulating film ( ) and beneath a first insulating layer ( ). On the first insulating layer ( ) is formed a second conductive layer ( ) followed by a second insulating layer ( ), either or both of which are very thin. A third conductive layer ( ) is placed on the second insulating layer ( ). A connecting column ( ) extends from the third conducting layer ( ) through and forming an end contact with the second conductive layer ( ) to the first conducting layer ( ) and the substrate ( ), with a greater portion of the column resting upon the substrate ( ). The third conductive layer ( ) forms the gate electrode ( ) of a top gate type TFT.