Kawasaki, Japan

Hiroshi Morioka


Average Co-Inventor Count = 1.9

ph-index = 3

Forward Citations = 33(Granted Patents)


Location History:

  • Kanagawa, JP (2010)
  • Kawasaki, JP (2005 - 2016)

Company Filing History:


Years Active: 2005-2016

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10 patents (USPTO):

Title: Hiroshi Morioka: Innovator in Semiconductor Technology

Introduction

Hiroshi Morioka is a prominent inventor based in Kawasaki, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 10 patents. His work has been instrumental in advancing the capabilities of semiconductor devices.

Latest Patents

One of Morioka's latest patents is focused on a semiconductor device and the process for producing the same. This innovative semiconductor device features a contact structure that includes a conductive region, a first film, and a second film formed over the conductive region. The design incorporates a contact electrode that extends through the layer to the conductive region, effectively replacing a portion of the layer with a portion of the contact electrode. The configuration allows for the portion of the layer to be constituted by only the first film, only the second film, or a combination of both, with the first film occupying a major part of the layer.

Career Highlights

Throughout his career, Morioka has worked with notable companies such as Fujitsu Microelectronics Limited and Fujitsu Semiconductor Limited. His experience in these organizations has allowed him to refine his expertise in semiconductor technology and contribute to various innovative projects.

Collaborations

Morioka has collaborated with several talented individuals in the field, including Masanori Terahara and Jusuke Ogura. These collaborations have further enriched his work and have led to advancements in semiconductor device technology.

Conclusion

Hiroshi Morioka's contributions to semiconductor technology through his patents and collaborations highlight his role as a key innovator in the industry. His work continues to influence the development of advanced semiconductor devices.

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