The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 02, 2010
Filed:
Oct. 27, 2003
Applicant:
Hiroshi Morioka, Kawasaki, JP;
Inventor:
Hiroshi Morioka, Kawasaki, JP;
Assignee:
Fujitsu Microelectronics Limited, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
G03F 1/00 (2006.01); B44C 1/22 (2006.01);
U.S. Cl.
CPC ...
Abstract
Photosensitive resist material is coated on a substrate and exposed and developed to form a resist pattern. The surface layer of sidewalls and a top wall of the resist pattern is etched by plasma of a mixture gas of a first gas and an SOgas, the first gas being at least one gas selected from a group consisting of He, Ne, Ar, Xe, Kr, CO, COand N. Resist pattern deformation and pattern collapse can be prevented while the resist pattern shrinks.
Morioka, Hiroshi. (2010). Micro pattern forming method and semiconductor device manufacturing method (U.S. Patent No. 7670759). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7670759
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile