The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 19, 2005
Filed:
Dec. 22, 2003
Manabu Kojima, Kawasaki, JP;
Kenichi Goto, Kawasaki, JP;
Hiroshi Morioka, Kawasaki, JP;
Kenichi Okabe, Kawasaki, JP;
Manabu Kojima, Kawasaki, JP;
Kenichi Goto, Kawasaki, JP;
Hiroshi Morioka, Kawasaki, JP;
Kenichi Okabe, Kawasaki, JP;
Fujitsu Limited, Kawasaki, JP;
Abstract
A method of manufacturing a CMOS semiconductor device able to reduce the effective thickness of the gate insulating film and able to secure stable performance is provided. The method in one embodiment comprises the steps of: forming a polycrystalline silicon film on a gate insulating film; introducing an n-type impurity into the polycrystalline silicon film in an nMOS formation region before gate processing of the polycrystalline silicon film; performing heat treatment so that the impurity diffuses in the polycrystalline silicon film and is activated; and patterning the polycrystalline silicon to form a gate pattern before introducing an impurity into the polycrystalline silicon film at a pMOS formation region.