The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 27, 2005
Filed:
Oct. 29, 2003
Masanori Terahara, Kawasaki, JP;
Hiroshi Morioka, Kawasaki, JP;
Masanori Terahara, Kawasaki, JP;
Hiroshi Morioka, Kawasaki, JP;
Fujitsu Limited, Kawasaki, JP;
Abstract
The semiconductor device fabrication method comprises the step of forming a first insulation filmover a semiconductor substratethe step of forming a semiconductor filmover the first insulation filmthe step of forming a resist filmover the semiconductor filmthe step of forming openingsin the resist filmthe step of etching the semiconductor filmwith the resist filmas the mask; the step of etching the first insulation filmwith the semiconductor filmas the mask; and the step of etching the semiconductor substratewith the first insulation filmas the mask to form trenchesin the semiconductor substrateSilicon nitride film is patterned, using a mask of polysilicon film, whereby the silicon nitride film can be etched with high selectivity to the polysilicon film. Accordingly, a good pattern of the silicon nitride film can be formed. Even when micronized trenches are formed in a semiconductor substrate with silicon nitride film as a mask, the trenches can be formed in a required configuration. Thus, good element isolation regions can be formed, further micronized.