The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 10, 2009
Filed:
Feb. 22, 2006
Masaki Okuno, Kawasaki, JP;
Sadahiro Kishii, Kawasaki, JP;
Hiroshi Morioka, Kawasaki, JP;
Masanori Terahara, Kawasaki, JP;
Shigeo Satoh, Kawasaki, JP;
Kaina Suzuki, Kawasaki, JP;
Masaki Okuno, Kawasaki, JP;
Sadahiro Kishii, Kawasaki, JP;
Hiroshi Morioka, Kawasaki, JP;
Masanori Terahara, Kawasaki, JP;
Shigeo Satoh, Kawasaki, JP;
Kaina Suzuki, Kawasaki, JP;
Fujitsu Microelectronics Limited, Tokyo, JP;
Abstract
A semiconductor device is disclosed that includes a semiconductor substrate, a device region disposed at a predetermined location of the semiconductor substrate, and a shallow trench isolation region that isolates the device region. The shallow trench isolation region includes a trench, a nitride film liner disposed at an upper portion of a side wall of the trench, and a thermal oxide film disposed at a lower portion of the side wall of the trench. The shallow trench isolation is arranged such that the width of a second portion of the shallow trench isolation region at which the thermal oxide film is disposed may be wider than the width of a first portion of the shallow trench isolation region at which the lower end of the nitride film liner is disposed.