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Kyoto, Japan

Hironobu Nakao

This inventor holds 14 USPTO granted patents. Top assignee: Rohm Co., Ltd.. Active years: 1993-1999.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hironobu Nakao. Retrieved from https://idiyas.com/inventor/hironobu-nakao

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 14

% Patents Active = 100.0

Average Co-Inventor Count = 1.3

ph-index = 8

Forward Citations = 288(Granted Patents)


Location History:

  • Ukyo, JP (1994)
  • Kyoto, JP (1993 - 1999)

Company Filing History:

goldMedal14 out of 6,021 
 
Rohm Co., Ltd.
 patents

Years Active: 1993-1999

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14 patents (USPTO):Explore Patents
1. 5874761 - Semiconductor memory device with three-dimensional cluster distribution (1999-02-23),
2. 5654568 - Semiconductor device including nonvolatile memories (1997-08-05),
3. 5589700 - Semiconductor nonvolatile memory (1996-12-31),
4. 5402374 - Non-volatile semiconductor memory device and memory circuit using the (1995-03-28),
5. 5366913 - Method of manufacturing semiconductor device employing oxide sidewalls (1994-11-22),
6. 5345415 - Nonvolatile semiconductor memory utilizing a ferroelectric film (1994-09-06),
7. 5332915 - Semiconductor memory apparatus (1994-07-26),
8. 5331190 - Semiconductor device including nonvolatile memories (1994-07-19),
9. 5319230 - Non-volatile storage device (1994-06-07),
10. 5303182 - Nonvolatile semiconductor memory utilizing a ferroelectric film (1994-04-12),
11. 5300799 - Nonvolatile semiconductor storage device with ferroelectric capacitors (1994-04-05),
12. 5293062 - FET nonvolatile memory with composite gate insulating layer (1994-03-08),
13. 5291048 - Non-volatile storage device with impurities in nitride toward source side (1994-03-01),
14. 5187636 - Dielectric device (1993-02-16),

Title: Hironobu Nakao: Innovator in Semiconductor Technology

Introduction

Hironobu Nakao is a prominent inventor based in Kyoto, Japan, known for his significant contributions to semiconductor technology. With a total of 14 patents to his name, Nakao has made remarkable advancements in the field of nonvolatile memory devices.

Latest Patents

Nakao's latest patents include a semiconductor memory device with three-dimensional cluster distribution. This innovative method of producing a semiconductor memory device involves creating an overlap between the distribution of semiconductor clusters in a gate insulating layer and a drain region through oblique ion implantation. This technique utilizes the edge of the semiconductor cluster distribution as a self-align mask. The design allows for a 1Tr/cell structure, which enhances the properties of nonvolatile memory devices that utilize an insulating film. Another notable patent is for a semiconductor device that includes nonvolatile memories. This invention offers advantages such as easier integration of memory circuit cells, simplified manufacturing processes, and reduced production costs.

Career Highlights

Nakao has built a successful career at Rohm Co., Ltd., where he has been instrumental in developing cutting-edge semiconductor technologies. His work has not only advanced the field but has also contributed to the company's reputation as a leader in semiconductor innovation.

Collaborations

Throughout his career, Nakao has collaborated with talented individuals such as Noriyuki Shimoji and Takashi Nakamura. These partnerships have fostered a creative environment that has led to groundbreaking advancements in semiconductor technology.

Conclusion

Hironobu Nakao's contributions to the semiconductor industry are invaluable, and his innovative patents continue to shape the future of nonvolatile memory devices. His work exemplifies the spirit of innovation and dedication to advancing technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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