The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 23, 1999
Filed:
Oct. 15, 1992
Hironobu Nakao, Kyoto, JP;
Rohm Co., Ltd., Kyoto, JP;
Abstract
A method of producing a semiconductor memory device forms an overlap between a distribution of semiconductor clusters in a gate insulating layer and a drain region by oblique ion implantation using the edge of the semiconductor cluster distribution as a self-align mask. At least a portion of the semiconductor cluster distribution which is the nearest to the Si substrate and the drain overlaps a drain diffusion layer, and the semiconductor clusters are overlapped with each other. Thus, the device has a 1Tr/cell structure. As a result, the properties of a nonvolatile memory device using an insulating film are improved.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile