The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 26, 1994
Filed:
Oct. 21, 1992
Applicant:
Inventors:
Assignee:
Rohm Co., Ltd., Kyoto, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
257325 ; 257324 ; 257326 ;
Abstract
A high dielectric film instead of an oxidizing film conventionally used is used in the non-volatile memory of an MoNoS construction. Using a mixed film composed of a high dielectric constant film and an amorphous insulating film for the trap film, the ratio of the voltage applied to the tunnel oxidizing film is increased so that writing and erasing operations can be effected with a low voltage. Penetration of the electrons into the electrode and the flow of positive holes from the electrode are prevented so as to increase the flow efficiency.
Shimoji, Noriyuki. (1994). Semiconductor memory apparatus (U.S. Patent No. 5332915). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5332915
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile