The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 01, 1994
Filed:
May. 19, 1992
Applicant:
Inventor:
Hironobu Nakao, Kyoto, JP;
Assignee:
Rohm Co., Ltd., Kyoto, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
257325 ; 257639 ; 365184 ;
Abstract
A non-volatile storage device such as an EPROM (erasable programmable read only memory) and a method of manufacturing the same. A silicon oxide film, a silicon nitride film and a silicon oxide film are formed one after another on a gate region of a semiconductor substrate in which a source region and a drain region are formed. To restrict carrier capture to the silicon nitride film near the source region, impurity ions such as hydrogen ions are mixed with the silicon nitride film at a side toward the source region.
Nakao, Hironobu. (1994). Non-volatile storage device with impurities in nitride toward source side (U.S. Patent No. 5291048). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5291048
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile