Incline Village, NV, United States of America

Hilton Frank Glavish

This inventor holds 26 USPTO granted patents, primarily in Ion Implantation Technology. Top assignees: Nissin Electric Co., Ltd., Applied Materials, Inc., Ebara Solar, Inc.. Active years: 1992-2017.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hilton Frank Glavish. Retrieved from https://idiyas.com/inventor/hilton-frank-glavish

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 61.5

Average Co-Inventor Count = 2.3

ph-index = 14

Forward Citations = 626(Granted Patents)


Company Filing History:


Years Active: 1992-2017

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Areas of Expertise:
Ion Beam Scanner
Ion Implant Apparatus
Magnetic Scanning
Semiconductor Substrates
Ion Source Assembly
Charged Particle Filtering
Broad Range Ion Implanter
Heavy Ion Beams
RF Electric Fields
Magnetic Field Furnace
Ion Implanter
Beam Stop
26 patents (USPTO):Explore Patents

Title: Hilton Frank Glavish: Innovator in Ion Implant Technology

Introduction

Hilton Frank Glavish, based in Incline Village, NV, has made significant contributions to the field of ion implantation technology, holding a noteworthy total of 26 patents. His inventive work pertains to the innovative applications of ion beam scanning systems, enhancing processes used in semiconductor manufacturing.

Latest Patents

Among Glavish's latest patents is the development of an ion beam scanner for an ion implanter. This advanced magnetic system facilitates the uniform scanning of an ion beam across semiconductor wafers. It features a magnetic scanner that employs both AC and DC coil windings, which are arranged orthogonally, allowing for improved beam spot uniformity at the wafer. The design incorporates a collimator with symmetrical dipoles that define an aperture, ensuring a high level of precision during the ion implantation process.

Additionally, he created an ion implant apparatus that utilizes a drum-type scan wheel to hold wafers at a cone angle of less than 60°. This system enables the direction of a collimated scanned beam of ions, such as hydrogen, along a final beam path at an angle of at least 45° to the scan wheel's rotational axis. Ions are extracted and accelerated to high implant energies over 500 keV before analysis, indicating a significant advancement in the efficiency and accuracy of ion implantation.

Career Highlights

Throughout his professional journey, Glavish has worked with leading companies in the semiconductor industry, including Nissin Electric Co., Ltd. and Applied Materials, Inc. His expertise and innovations have played a crucial role in enhancing ion implantation techniques, which are vital for the fabrication of high-performance semiconductor devices.

Collaborations

Glavish has collaborated with notable industry professionals, including Geoffrey Ryding and Theodore H. Smick. Their collective efforts have contributed to advancements in the understanding and implementation of ion beam technology, further establishing Glavish's reputation as a prominent innovator in his field.

Conclusion

Hilton Frank Glavish continues to shape the landscape of ion implantation technology with his innovative patents and collaborations. His work not only reflects his commitment to advancing semiconductor manufacturing processes but also highlights the importance of innovation in driving industry standards to new heights. With 26 patents to his name, Glavish remains an influential figure and a driving force in the realm of ion implantation.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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