Nissin Electric Co., Ltd.

Applied Materials, Inc.

Nissin Ion Equipment Co., Ltd.

Twin Creeks Technologies, Inc.

Ebara Solar, Inc.

Gtat Corporation

Semequip, Inc.

Other

Ebara Corporation

Ibis Technology Corporation

Semiquip, Inc.

Zimec Consulting, Inc.

Hilton Frank Glavish

Geoffrey Ryding

Theodore H Smick

Masao Naito

Thomas N Horsky

Kenneth Harry Purser

Sami K Hahto

Dale Conrad Jacobson

Nobuo Nagai

Kentaro Fujita

Keiji Maishigi

Hideyuki Isozaki

Takao Sakase

Nariaki Hamamoto

Joseph Daniel Gillespie

Ronald Horner

Paul Eide

William Park, Jr

Drew Arnold

Benjamin Thomas King

Mehran Nasser-Ghodsi

Yasunori Ando

Peter T Kindersley

Causon Ko-Chuan Jen

John Ruffell

Robert John Clifford Mitchell

Michael T Wauk

Andrew Wittkower

Shojiro Dohi

Michael A Guerra

Michael A Guerra, Deceased

Gaylord C Noblitt, Iii

Joeph Daniel Gillespie

Syuichi Maeno

John Stuart Gordon

Tadashi Kawai

A magnetic system for uniformly scanning an ion beam across a semiconductor wafer comprises a magnetic scanner having ac and dc coil windings each of which extend linearly along internal pole faces of a magnetic core. The ac and dc coil windings are mutually orthogonal; a time dependent magnetic component causes ion beam scanning while a substantially static (dc) field component allows the ion beam to be bent in an orthogonal plane. The current density in the ac and dc coil windings is uniformly dispersed along the pole faces leading to an improved beam spot uniformity at the wafer. The magnetic system also includes a collimator having first and second mutually opposed symmetrical dipoles defining an aperture between them. The poles of each dipole have a pole face varying monotonically and polynomially in a direction perpendicular to a central axis of the collimator: an increasing pole gap is formed towards that central axis.

Ion beam scanner for an ion implanter

Ion implant apparatus using a drum-type scan wheel holds wafers with a total cone angle less than 60&#xb0;. A collimated scanned beam of ions, for example H, is directed along a final beam path which is at an angle of at least 45&#xb0; to the axis of rotation of the scan wheel. Ions are extracted from a source and accelerated along a linear acceleration path to a high implant energy (more than 500 keV) before scanning or mass analysis. The mass analyzer may be located near the axis of rotation and unwanted ions are directed to an annular beam dump which may be mounted on the scan wheel.

Ion implant apparatus and a method of implanting ions

An ion beam bending magnet provides a curved path through the magnet for bending a ribbon-shaped ion beam having its major cross-sectional dimension normal to the bending plane of the magnet. The magnet comprises a ferromagnetic yoke surrounding the beam path and having an internal profile in cross-section formed of four angled sides. These sides are angled to the major dimension of the ribbon beam passing through the magnet, so that the internal profile of the yoke is relatively wide in the center of the ribbon beam and relatively narrow near the top and bottom edges of the ribbon beam. Electrical conductors against the internal surfaces of the yoke provide a uniform distribution of electrical current per unit length along the angled sides of the profile, providing a substantially uniform magnetic bending field within the magnet yoke.

Ion beam bending magnet for a ribbon-shaped ion beam

A multipurpose ion implanter beam line configuration comprising a mass analyzer magnet followed by a magnetic scanner and magnetic collimator combination that introduce bends to the beam path, the beam line constructed for enabling implantation of common monatomic dopant ion species cluster ions, the beam line configuration having a mass analyzer magnet defining a pole gap of substantial width between ferromagnetic poles of the magnet and a mass selection aperture, the analyzer magnet sized to accept an ion beam from a slot-form ion source extraction aperture of at least about 80 mm height and at least about 7 mm width, and to produce dispersion at the mass selection aperture in a plane corresponding to the width of the beam, the mass selection aperture capable of being set to a mass-selection width sized to select a beam of the cluster ions of the same dopant species but incrementally differing molecular weights, the mass selection aperture also capable of being set to a substantially narrower mass-selection width and the analyzer magnet having a resolution at the selection aperture sufficient to enable selection of a beam of monatomic dopant ions of substantially a single atomic or molecular weight, the magnetic scanner and magnetic collimator being constructed to successively bend the ion beam in the same sense, which is in the opposite sense to that of the bend introduced by the analyzer magnet of the beam line.

Ion beam apparatus and method employing magnetic scanning

A multipurpose ion implanter beam line configuration constructed for enabling implantation of common monatomic dopant ion species and cluster ions, the beam line configuration having a mass analyzer magnet defining a pole gap of substantial width between ferromagnetic poles of the magnet and a mass selection aperture, the analyzer magnet sized to accept art ion beam from a slot-form ion source extraction aperture of at least about 80 mm height and at least about 7 mm width, and to produce dispersion at the mass selection aperture in a plane corresponding to the width of the beam, the mass selection aperture capable of being set to a mass-selection width sized to select a beam of the cluster ions of the same dopant species but incrementally differing molecular weights, the mass selection aperture also capable of being set to a substantially narrower mass-selection width and the analyzer magnet having a resolution at the mass selection aperture sufficient to enable selection of a beam of monatomic dopant ions of substantially a single atomic or molecular weight.

Ion beam apparatus and method for ion implantation

A hydrogen ion implanter for the exfoliation of silicon from silicon wafers uses a large scan wheel carrying 50+ wafers around its periphery and rotating about an axis. In one embodiment, the axis of rotation of the wheel is fixed and the wheel is formed with tensioned spokes supporting a rim carrying the wafer supports. The spokes may be used for carrying cooling fluid to and from the wafer supports. In one embodiment, a ribbon beam of hydrogen ions is directed down on a peripheral edge of the wheel. The ribbon beam extends over the full radial width of wafers on the wheel.

Ion implantation apparatus

A hydrogen ion implanter for the exfoliation of silicon from silicon wafers uses a large scan wheel carrying 50+ wafers around its periphery and rotating about an axis. In one embodiment, the axis of rotation of the wheel is fixed and a ribbon beam of hydrogen ions is directed down on a peripheral edge of the wheel. The ribbon beam extends over the full radial width of wafers on the wheel. The beam is generated by an ion source providing an extracted ribbon beam having at least 100 mm major cross-sectional diameter. The ribbon beam may be passed through a 90&#xb0; bending magnet which bends the beam in the plane of the ribbon. The magnet provides intensity correction across the ribbon to compensate for the dependency on the radial distance from the wheel axis of the speed at which parts of the wafers pass through the ribbon beam.

Ion implantation apparatus and a method

A hydrogen ion implanter for the exfoliation of silicon from silicon wafers uses a large scan wheel carrying 50+ wafers around its periphery and rotating about an axis. In one embodiment, the axis of rotation of the wheel is fixed and a ribbon beam of hydrogen ions is directed down on a peripheral edge of the wheel. The ribbon beam extends over the full radial width of wafers on the wheel. The beam is generated by an ion source providing an extracted ribbon beam having at least 100 mm major cross-sectional diameter. The ion source may use core-less saddle type coils to provide a uniform field confining the plasma in the ion source. The ribbon beam may be passed through a 90&#xb0; bending magnet which bends the beam in the plane of the ribbon.

Ion source assembly for ion implantation apparatus and a method of generating ions therein

A multipurpose ion implanter beam line configuration comprising a mass analyzer magnet followed by a magnetic scanner and magnetic collimator combination that introduce bends to the beam path, the beam line constructed for enabling implantation of common monatomic dopant ion species cluster ions, the beam line configuration having a mass analyzer magnet defining a pole gap of substantial width between ferromagnetic poles of the magnet and a mass selection aperture, the analyzer magnet sized to accept an ion beam from a slot-form ion source extraction aperture of at least about 80 mm height and at least about 7 mm width, and to produce dispersion at the mass selection aperture in a plane corresponding to the width of the beam, the mass selection aperture capable of being set to a mass-selection width sized to select a beam of the cluster ions of the same dopant species but incrementally differing molecular weights, the mass selection aperture also capable of being set to a substantially narrower mass-selection width and the analyzer magnet having a resolution at the mass selection aperture sufficient to enable selection of a beam of monatomic dopant ions of substantially a single atomic or molecular weight, the magnetic scanner and magnetic collimator being constructed to successively bend the ion beam in the same sense, which is in the opposite sense to that of the bend introduced by the analyzer magnet of the beam line.

The ion implanting apparatus according to this invention includes: an ion source for producing the ion beamincluding desired ion species and being shaped in a sheet with a width longer than a narrow width of a substratea mass separating magnetfor selectively deriving the desired ion species by bending the ion beam in a direction perpendicular to a sheet face thereof, a separating slitfor selectively making the desired ion species pass through by cooperating with the mass separating magnetand a substrate drive devicefor reciprocatedly driving the substratein a direction substantially perpendicular to the sheet faceof the ion beamwithin an irradiating area of the ion beamwhich has passed through a separating slit

Ion implanting apparatus

An apparatus and method is provided for manufacturing a semiconductor substrate such as web crystals. The apparatus includes a chamber and a growth hardware assembly housed within the chamber. A magnetic field system produces a vertical magnetic field within the chamber.

Method of using a magnetic field furnace to manufacture semiconductor substrates

Magnetic field furnace and a method of using the same to manufacture semiconductor substrates

A charged particle filter provides a curved through path and has both magnetic poles for applying a magnetic field normal to the plane of curvature of the path and electrodes for applying a radial electric field. The filter is used as an energy filter downstream of an accelerator in an ion implanter. The filter can be set to provide a range of energy dispersions, to operate as an achromatic bend, or to reject lower charge state ions.

Apparatus and method for charged particle filtering and ion implantation

A beam stop ( ) has a charge collecting member ( ) which extends in the direction of scanning of a scanned beam by less than the total distance scanned, so that variation in the charge signal derived from the collecting member can provide a timing signal for use in monitoring alignment of the scanned beam. In a preferred embodiment, the beam stop plate ( ) has slits ( ) leading to apertures ( ) containing charge collecting rods ( ) located within the thickness of the beam stop plate ( ).

Ion implanter and beam stop therefor

Growing community of inventors

Incline Village, NV, United States of America

Hilton Frank Glavish