This inventor holds 18 USPTO granted patents and 2 published patent applications, primarily in Power Semiconductor Devices. Top assignees: Mitsubishi Electric Corporation, Mitsubishi Electric Corpotation. Active years: 2016-2025.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
17 out of 16,618 
1 out of 13 Years Active: 2016-2025
Areas of Expertise:
Title: Hidetoshi Ishibashi: Innovator in Semiconductor Technology
Introduction: Hidetoshi Ishibashi, based in Tokyo, Japan, is a distinguished inventor known for his significant contributions to the field of semiconductor technology. With a remarkable portfolio of 18 patents, Ishibashi has made strides that influence both the manufacturing processes and performance capabilities of power semiconductor devices.
Latest Patents: Among Ishibashi's latest innovations are two notable patents. The first is a comprehensive test method for manufacturing semiconductor devices. This method involves applying thermal grease on a support plate, placing a press plate over it, altering the distance between the two, and observing the resulting shape of the thermal grease to determine pumping-out performance. The second patent focuses on a power semiconductor device that reduces the size of insulating substrates while minimizing connection failures. This invention comprises an insulating substrate, a semiconductor element, and a printed circuit board that integrates a core member with multiple conductor layers, ensuring efficient electrical connections while optimizing space and performance.
Career Highlights: Hidetoshi Ishibashi has had an impressive career at renowned companies, specifically at Mitsubishi Electric Corporation. His work has not only led to significant advancements in semiconductor technology but has also placed him at the forefront of innovation in the industry.
Collaborations: Throughout his career, Ishibashi has collaborated with notable professionals such as Hiroshi Yoshida and Daisuke Murata. These collaborations have fostered a dynamic environment for innovation and contributed to the development of effective solutions in semiconductor device manufacturing.
Conclusion: Hidetoshi Ishibashi's commitment to innovation in semiconductor technology is reflected in his extensive patent portfolio and influential career. His latest inventions promise to streamline manufacturing processes and enhance device performance, solidifying his legacy as a key inventor in the field.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile