The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 22, 2018
Filed:
May. 03, 2016
Applicant:
Mitsubishi Electric Corporation, Tokyo, JP;
Inventors:
Minoru Egusa, Tokyo, JP;
Hidetoshi Ishibashi, Tokyo, JP;
Yoshitaka Otsubo, Tokyo, JP;
Hiroyuki Masumoto, Tokyo, JP;
Hiroshi Kawata, Hyogo, JP;
Assignee:
Mitsubishi Electric Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01R 12/58 (2011.01); H01L 23/053 (2006.01);
U.S. Cl.
CPC ...
H01R 12/585 (2013.01); H01L 23/053 (2013.01); H01L 2224/48137 (2013.01); H01L 2224/73265 (2013.01); H01L 2924/19107 (2013.01);
Abstract
A power semiconductor device includes: an outer case; at least one press-fit terminal buried in a top surface of the outer case; and a plurality of supporting portions formed so as to protrude from the top surface of the outer case. A top end of the press-fit terminal protrudes more than top surfaces of the supporting portions from the top surface of the outer case.