The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 10, 2022

Filed:

Oct. 16, 2019
Applicant:

Mitsubishi Electric Corporation, Tokyo, JP;

Inventors:

Takuya Kitabayashi, Tokyo, JP;

Hiroshi Yoshida, Tokyo, JP;

Hidetoshi Ishibashi, Tokyo, JP;

Daisuke Murata, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/62 (2006.01); H01L 23/498 (2006.01); H01L 23/492 (2006.01);
U.S. Cl.
CPC ...
H01L 23/62 (2013.01); H01L 23/492 (2013.01); H01L 23/49822 (2013.01); H01L 23/49827 (2013.01); H01L 23/49866 (2013.01);
Abstract

A technique for activating a fuse function in a semiconductor device in a relatively short time is provided. The semiconductor device includes a second bonding material provided on the upper surface of the insulating substrate, a third bonding material provided on an upper surface of the semiconductor element, a through hole extending from the first circuit pattern to the second circuit pattern via the core material, a conductive film provided on an inner wall of the through hole, and a heat insulating material provided inside the through hole and surrounded by the conductive film in plan view. The conductive film allows the first circuit pattern and the second circuit pattern to be conductive.


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