Tokyo, Japan

Hideki Nishihata

USPTO Granted Patents = 17 

 

Average Co-Inventor Count = 3.0

ph-index = 3

Forward Citations = 48(Granted Patents)


Location History:

  • Minato-ku, JP (2011)
  • Tokyo, JP (2008 - 2012)

Company Filing History:


Years Active: 2008-2012

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17 patents (USPTO):Explore Patents

Certainly! Here is an article about inventor Hideki Nishihata:

Title: Unveiling the Innovation of Hideki Nishihata in Semiconductor Production

Introduction: Hideki Nishihata, a distinguished inventor based in Tokyo, JP, has made significant contributions to the field of semiconductor production with a total of 17 patents under his name. His relentless pursuit of excellence has led to groundbreaking methodologies that have revolutionized the industry.

Latest Patents:

1. Method for producing semiconductor substrate: Hideki's inventive method focuses on suppressing defects such as voids or blisters in laminated wafers, enhancing the overall quality of semiconductor substrates.

2. Method for producing a bonded wafer: By implanting oxygen ions into the wafer for the active layer at a controlled temperature, Hideki has developed a technique that ensures excellent thickness uniformity and surface roughness in bonded wafers.

Career Highlights: Hideki Nishihata is associated with Sumco Corporation, a leading company in the semiconductor industry. His expertise and innovative ideas have played a vital role in advancing the company's research and development efforts, solidifying its position as a key player in the market.

Collaborations: Within Sumco Corporation, Hideki collaborates closely with esteemed colleagues such as Nobuyuki Morimoto and Akihiko Endo. Together, they form a dynamic team driving innovation and pushing the boundaries of semiconductor technology.

Conclusion: In conclusion, Hideki Nishihata's inventive spirit and dedication to excellence have left an indelible mark on the field of semiconductor production. His patents stand as a testament to his innovative mindset and commitment to pushing the boundaries of technological advancement in the industry.

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