The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 19, 2011
Filed:
Sep. 11, 2009
Tatsumi Kusaba, Tokyo, JP;
Akihiko Endo, Tokyo, JP;
Hideki Nishihata, Tokyo, JP;
Nobuyuki Morimoto, Tokyo, JP;
Tatsumi Kusaba, Tokyo, JP;
Akihiko Endo, Tokyo, JP;
Hideki Nishihata, Tokyo, JP;
Nobuyuki Morimoto, Tokyo, JP;
SUMCO Corporation, Minato-ku, JP;
Abstract
A bonded silicon wafer is produced by a method including an oxygen ion implantation step on a silicon wafer for active layer having the specified wafer face; a step of bonding the silicon wafer for active layer to a silicon wafer for support; a first heat treatment step; an inner SiOlayer exposing step; a step of removing the inner SiOlayer; and a planarizing step of polishing a silicon wafer composite or subjecting the silicon wafer composite to a heat treatment in a reducing atmosphere (a second heat treatment step).