The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 23, 2011
Filed:
Aug. 06, 2008
Hideki Nishihata, Minato-ku, JP;
Nobuyuki Morimoto, Minato-ku, JP;
Tatsumi Kusaba, Minato-ku, JP;
Akihiko Endo, Minato-ku, JP;
Hideki Nishihata, Minato-ku, JP;
Nobuyuki Morimoto, Minato-ku, JP;
Tatsumi Kusaba, Minato-ku, JP;
Akihiko Endo, Minato-ku, JP;
SUMCO Corporation, Minato-ku, JP;
Abstract
In a method for producing a bonded wafer by bonding a wafer for active layer and a wafer for support layer and thinning the wafer for active layer according to the invention, oxygen ions are implanted into the wafer for active layer at a state of holding a temperature of the wafer for active layer below 200° C. under a dose of 5×10to 5×10atoms/cm, whereby there can be obtained a bonded wafer being excellent in the thickness uniformity after thinning and having a dramatically improved surface roughness.