The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 19, 2009
Filed:
Apr. 12, 2006
Applicants:
Hideki Nishihata, Tokyo, JP;
Tatsumi Kusaba, Tokyo, JP;
Nobuyuki Morimoto, Tokyo, JP;
Inventors:
Assignee:
Sumco Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/461 (2006.01);
U.S. Cl.
CPC ...
Abstract
In the production process of an SOI substrate using a hydrogen ion implantation method, a process is provided for cleaning the substrate which can prevent formation of voids when bonding substrates and formation of blistering after exfoliation. In the process for cleaning, cleaning of the substrate is performed before performing hydrogen ion implantation. As the cleaning method, one or more of a combination selected from the group consisting of SC-1 cleaning, SC-1 cleaning+SC-2 cleaning, HF/Ocleaning, and HF cleaning+Ocleaning, can be used.