Kanagawa, Japan

Hideaki Ninomiya

This inventor holds 29 USPTO granted patents, primarily in Power Semiconductor Devices. Top assignee: Kabushiki Kaisha Toshiba. Active years: 1999-2019.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hideaki Ninomiya. Retrieved from https://idiyas.com/inventor/hideaki-ninomiya

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 65.5

Average Co-Inventor Count = 3.1

ph-index = 11

Forward Citations = 358(Granted Patents)


Location History:

  • Kanagawa, JP (2005 - 2012)
  • Himeji, JP (2014 - 2015)
  • Nomi Ishikawa, JP (2017)
  • Hyogo-ken, JP (2017)
  • Yokohama, JP (1999 - 2019)

Company Filing History:


Years Active: 1999-2019

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Areas of Expertise:
Power Semiconductor Device
Insulated Gate Bipolar Transistor
Trench Gate Power Device
Rectifying Action
Junction Termination Structure
Conductivity Modulation
Lateral Semiconductor Device
Vertical Semiconductor Device
Manufacturing Method
Control Method
Protection Method
Semiconductor Device
29 patents (USPTO):Explore Patents

Title: Innovations of Hideaki Ninomiya in Power Semiconductor Devices

Introduction

Hideaki Ninomiya, a prolific inventor based in Kanagawa, Japan, holds an impressive portfolio of 29 patents. His work primarily focuses on advancements in power semiconductor devices, contributing significantly to the field of electronics and technology.

Latest Patents

Among his latest innovations are two notable patents. The first is a "Power Semiconductor Device," which features a unique design incorporating trenches within a base layer to create main and dummy cells. This design enhances performance by optimally managing the flow of carriers, ultimately improving device efficiency. The second patent, titled "Semiconductor Device and Method of Manufacturing the Same," outlines a semiconductor device that includes multiple semiconductor regions and insulating layers that work synergistically. This innovation optimizes conductive and insulating properties, paving the way for more efficient semiconductor applications.

Career Highlights

Hideaki Ninomiya's career is marked by his association with Kabushiki Kaisha Toshiba, where he has been instrumental in the research and development of semiconductor technologies. His contributions have led to advances that support various electronic devices, reinforcing Toshiba's leadership in the semiconductor market.

Collaborations

In his innovative journey, Ninomiya has collaborated with talented coworkers, including Tomoki Inoue and Tsuneo Ogura. Their combined expertise in semiconductor technology has facilitated significant progress in their projects, fostering an environment rich in collaboration and creativity.

Conclusion

In summary, Hideaki Ninomiya's contributions to the field of power semiconductor devices demonstrate his commitment to innovation. His patents not only reflect his technical proficiency but also the collaborative spirit of his team at Toshiba. As technology continues to evolve, Ninomiya's work will undoubtedly play a crucial role in shaping the future of electronics.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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