The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 01, 2007
Filed:
Jun. 17, 2005
Satoshi Teramae, Kanagawa, JP;
Shigeru Hasegawa, Fukuoka, JP;
Hideaki Ninomiya, Kanagawa, JP;
Masahiro Tanaka, Fukuoka, JP;
Satoshi Teramae, Kanagawa, JP;
Shigeru Hasegawa, Fukuoka, JP;
Hideaki Ninomiya, Kanagawa, JP;
Masahiro Tanaka, Fukuoka, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
An insulated gate semiconductor device, includes an isolating structure shaped in a circulating section along the periphery of a semiconductor substrate to isolate that part from an inside device region, a peripheral diffusion region of the semiconductor substrate located outside the isolating structure, a plurality of cell structures defined in the inside device region and divided in segments by insulated trench-shaped gates to have a base region covered with an emitter region in its upper surface, a collector region, and an emitter electrode electrically connected to the emitter region and the base region, a dummy base region contiguous to the cell structures and configured as a base region that has its upper surface left without the emitter region connected to the emitter electrode, an inner region defined in and insulated from the dummy base region, and a connection part to electrically connect the inner region to the emitter electrode.