This inventor holds 4 USPTO granted patents and 1 published patent application. Top assignee: Kabushiki Kaisha Toshiba. Active years: 1998-2015.
Location History:
- Chiba, JP (1998)
- Kawasaki, JP (2005)
- Kanagawa, JP (2007)
- Hyogo-ken, JP (2015)
Company Filing History:
Years Active: 1998-2015
Title: Satoshi Teramae: Innovator in Semiconductor Technology
Introduction
Satoshi Teramae is a prominent inventor based in Hyogo, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 4 patents. His work focuses on developing advanced semiconductor devices that enhance performance and efficiency.
Latest Patents
Teramae's latest patents include innovative designs for semiconductor devices and units. One notable patent describes a semiconductor device that features an insulating substrate, a first and second electrode pattern, and a connection wiring with a thermal resistance larger than that of the first electrode pattern. Another patent details an insulated gate semiconductor device, which includes a unique isolating structure and multiple cell structures designed to improve electrical connectivity and performance.
Career Highlights
Satoshi Teramae is associated with Kabushiki Kaisha Toshiba, a leading company in the technology sector. His work at Toshiba has allowed him to push the boundaries of semiconductor technology, contributing to the development of devices that are crucial for modern electronics.
Collaborations
Throughout his career, Teramae has collaborated with notable colleagues, including Yoko Sakiyama and Michiaki Hiyoshi. These collaborations have fostered an environment of innovation and have led to the successful development of several key technologies in the semiconductor field.
Conclusion
Satoshi Teramae's contributions to semiconductor technology are noteworthy, with a focus on creating devices that enhance efficiency and performance. His patents reflect a commitment to innovation in the field, making him a significant figure in the industry.