The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 25, 2008
Filed:
Oct. 28, 2004
Tsuneo Ogura, Kanagawa, JP;
Masakazu Yamaguchi, Kanagawa, JP;
Tomoki Inoue, Tokyo, JP;
Hideaki Ninomiya, Kanagawa, JP;
Koichi Sugiyama, Kanagawa, JP;
Tsuneo Ogura, Kanagawa, JP;
Masakazu Yamaguchi, Kanagawa, JP;
Tomoki Inoue, Tokyo, JP;
Hideaki Ninomiya, Kanagawa, JP;
Koichi Sugiyama, Kanagawa, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
This disclosure concerns a semiconductor device that includes a first base layer; second base layers provided on a part of a first surface of the first base layer; trenches formed on each side of the second base layers; an emitter layer formed on a surface of the second base layers; a collector layer provided below a second surface of the first base layer, an insulating film formed on an inner wall of the trench, the insulating film being thicker on a bottom of the trench than on a side surface of the trench; a gate electrode formed within the trench, and isolated by the insulating film; and a space section provided between the second base layers adjacent to each other, the space section being electrically isolated from the emitter layer and the second base layers, wherein the space section includes a semiconductor layer being deeper than the second base layers.