The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 15, 2015
Filed:
Sep. 10, 2013
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Tomoko Matsudai, Tokyo, JP;
Tsuneo Ogura, Kamakura, JP;
Kazutoshi Nakamura, Himeji, JP;
Yuichi Oshino, Fuchu, JP;
Hideaki Ninomiya, Himeji, JP;
Yoshiko Ikeda, Yokohama, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A collector layer of a first conductivity type is provided in the IGBT region and the boundary region and functions as a collector of the IGBT in the IGBT region. A cathode layer of a second conductivity type is provided in the diode region apart from the collector layer and functions as a cathode of the diode. A drift layer of the second conductivity type is provided in the IGBT region, the boundary region, and the diode region, the drift layer being provided on sides of the collector layer and the cathode layer opposite the first electrode. A diffusion layer of the first conductivity type is provided in the boundary region on a side of the drift layer opposite the first electrode.