Plano, TX, United States of America

Hideaki Kawahara

This inventor holds 33 USPTO granted patents and 2 published patent applications, primarily in MOSFET Technology. Top assignee: Texas Instruments Corporation. Active years: 2003-2022.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hideaki Kawahara. Retrieved from https://idiyas.com/inventor/hideaki-kawahara

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 33 

% Patents Active = 100.0

Average Co-Inventor Count = 3.4

ph-index = 4

Forward Citations = 88(Granted Patents)


Location History:

  • Tokyo, JP (2003 - 2014)
  • Plano, TX (US) (2014 - 2022)

Company Filing History:


Years Active: 2003-2022

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Areas of Expertise:
Integrated Channel Diode
Trench Capacitor
Medium Voltage MOSFET
High-Voltage MOS Transistor
Power Transistor
Photodetector Cell
Shielding Trench Gate FET
Silicon Epitaxy
Dual RESURF Trench
Insulated Gate Bipolar Transistor
Thyristor Semiconductor Device
Photodiodes
33 patents (USPTO):Explore Patents

Title: The Innovative Contributions of Hideaki Kawahara

Introduction

Hideaki Kawahara, based in Plano, TX, has made significant strides in the field of semiconductor technology through his extensive work at Texas Instruments Corporation. With a remarkable portfolio of 33 patents, he exemplifies the spirit of innovation and engineering excellence.

Latest Patents

Among his latest patents is the "Integrated Channel Diode," which describes a sophisticated semiconductor device featuring a vertical drift region alongside RESURF trenches. This device utilizes a split gate configuration, where one section functions as the gate for a Metal-Oxide-Semiconductor (MOS) transistor, while the other acts as the gate for a channel diode. The innovative design includes a source electrode that enhances connectivity between the source regions of both the channel diode and the MOS transistor.

Another notable patent is the "Integrated Trench Capacitor," which reveals advancements in deep trench capacitor technology. This patent details the construction of a plurality of deep trenches within a semiconductor wafer, surrounded by dielectric layers and doped polysilicon fillers. This design aims to improve the efficiency and performance of semiconductor devices, showcasing Kawahara's forward-thinking approach to engineering.

Career Highlights

Kawahara's journey at Texas Instruments Corporation has been marked by numerous innovations in semiconductor design and technology. His ability to merge theoretical knowledge with practical applications has contributed significantly to the company's reputation as a leader in the electronics industry. His work not only enhances product performance but also showcases new methodologies within the semiconductor field.

Collaborations

Throughout his career, Kawahara has collaborated with esteemed colleagues such as Christopher Boguslaw Kocon and Simon John Molloy. These partnerships have fostered a creative environment, allowing for the exchange of ideas and further innovations in their projects.

Conclusion

In conclusion, Hideaki Kawahara stands out as a key innovator in the semiconductor industry, with a robust patent portfolio reflecting his dedication to advancing technology. His contributions at Texas Instruments Corporation, combined with strategic collaborations, continue to influence the landscape of electrical engineering and semiconductor development.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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