The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 27, 2018
Filed:
Sep. 30, 2016
Texas Instruments Incorporated, Dallas, TX (US);
Tatsuya Tominari, Tsukuba, JP;
Satoshi Suzuki, Ushiku, JP;
Seetharaman Sridhar, Richardson, TX (US);
Christopher Boguslaw Kocon, Mountain Top, PA (US);
Simon John Molloy, Allentown, PA (US);
Hideaki Kawahara, Plano, TX (US);
TEXAS INSTRUMENTS INCORPORATED, Dallas, TX (US);
Abstract
A method of forming a semiconductor device includes etching a high aspect ratio, substantially perpendicular trench in a semiconductor region doped with a first dopant having first conductivity type and performing a first cycle for depositing silicon doped with a second dopant on an inner surface of the high aspect ratio, substantially perpendicular trench, the first cycle comprising alternately depositing silicon at a first constant pressure and etching the deposited silicon at an etching pressure that ramps up from a first value to a second value, the second dopant having a second conductivity type that is opposite from the first conductivity type.