Company Filing History:
Years Active: 2018
Title: Tatsuya Tominari: Innovator in Semiconductor Technology
Introduction
Tatsuya Tominari is a prominent inventor based in Tsukuba, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the area of silicon epitaxy. His innovative work has led to the development of a unique method that enhances the performance of semiconductor devices.
Latest Patents
Tominari holds a patent for "Silicon epitaxy for high aspect ratio, substantially perpendicular deep silicon trench." This patent describes a method of forming a semiconductor device that includes etching a high aspect ratio trench in a semiconductor region. The process involves depositing silicon doped with a second dopant on the inner surface of the trench, which is crucial for improving device performance. He has 1 patent to his name.
Career Highlights
Tatsuya Tominari is currently employed at Texas Instruments Corporation, where he continues to push the boundaries of semiconductor technology. His work has been instrumental in advancing the capabilities of semiconductor devices, making them more efficient and effective.
Collaborations
Throughout his career, Tominari has collaborated with notable colleagues, including Satoshi Suzuki and Seetharaman Sridhar. These collaborations have fostered an environment of innovation and have contributed to the success of various projects.
Conclusion
Tatsuya Tominari is a key figure in the semiconductor industry, with a focus on innovative methods that enhance device performance. His contributions and collaborations continue to shape the future of technology in this field.