Enter inventor name

Average Co-Inventor Count = 3.2

ph-index = 6

Forward Citations = 153(Granted Patents)

Location History:

Ibaraki-ken, JP (2001)
Tsukuba-gun, JP (2003 - 2008)
Miho Inashiki Gun, JP (2008)
Tsukubamirai, JP (2007 - 2012)
Moriya, JP (2005 - 2016)
Ushiku, JP (2018)
Ibaraki, JP (2003 - 2020)
Ushiku Ibaraki, JP (2016 - 2020)

Company Filing History:

Texas Instruments Corporation

Hitachi Construction Machinery Co., Ltd.

patents

Years Active: 2001-2020

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27 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 10811533 - Medium high voltage MOSFET device (2020-10-20),

2. 10672901 - Power transistor with terminal trenches in terminal resurf regions (2020-06-02),

3. 10553717 - Medium voltage MOSFET device (2020-02-04),

4. 10392983 - Construction machine (2019-08-27),

5. 10256337 - Power transistor with terminal trenches in terminal resurf regions (2019-04-09),

6. 9905638 - Silicon epitaxy for high aspect ratio, substantially perpendicular deep silicon trench (2018-02-27),

7. 9356133 - Medium voltage MOSFET device (2016-05-31),

8. 9293894 - Electric charge generating device (2016-03-22),

9. 8885316 - Ionizer, static charge eliminating system, ion balance adjusting method, and workpiece static charge eliminating method (2014-11-11),

10. 8830650 - Ionizer and static charge eliminating method (2014-09-09),

11. 8174814 - Wire electrode type ionizer (2012-05-08),

12. 7920368 - Static Eliminator (2011-04-05),

13. 7898791 - Ionizer with drop-off prevention device for electrode (2011-03-01),

14. 7821762 - Piezoelectric transformer type ionizer and neutralization method (2010-10-26),

15. 7586731 - Ion balance adjusting method and method of removing charges from workpiece by using the same (2009-09-08),

Title: **Satoshi Suzuki: A Pioneer in Semiconductor Technology**

Introduction

Satoshi Suzuki, based in Moriya, Japan, is an influential inventor with a remarkable portfolio of 27 patents to his name. His contributions have significantly advanced the field of semiconductor technology, particularly in the development of high-performance devices that power modern electronics.

Latest Patents

Among his recent innovations, Satoshi's patents include a "Medium High Voltage MOSFET Device" and a "Power Transistor with Terminal Trenches in Terminal Resurf Regions." The medium voltage MOSFET patent details a semiconductor device featuring a vertical drain drift region between RESURF trenches with field plates, enhancing the efficiency and performance of power transistors. His power transistor patent describes a complex device with multiple layers and junctions designed to improve electrical performance and reliability in high-voltage applications.

Career Highlights

Throughout his career, Satoshi Suzuki has made significant impacts while working with prominent companies such as SMC Corporation and Texas Instruments Corporation. His experience in these esteemed environments has enabled him to refine his skills in semiconductor device engineering and innovation.

Collaborations

Satoshi has had the pleasure of collaborating with talented professionals in the industry, including colleagues Toshio Sato and Christopher Boguslaw Kocon. Together, they have contributed to advancements in semiconductor technologies, pushing the boundaries of what is possible in electronic devices.

Conclusion

Satoshi Suzuki stands out as a leading inventor in semiconductor innovations. With a strong foundation of patents demonstrating his expertise and collaboration with notable professionals, he continues to shape the future of electronic technologies. His work not only showcases individual brilliance but also illustrates the collaborative spirit essential to innovation in the field.

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