Gregory Bidal

Title: Gregory Bidal: Innovator in MOS Transistor Technology

Introduction

Gregory Bidal is a prominent inventor based in Grenoble, France. He has made significant contributions to the field of semiconductor technology, particularly in the development of metal oxide semiconductor (MOS) transistors. With a total of 6 patents to his name, Bidal's work has had a notable impact on the industry.

Latest Patents

Bidal's latest patents include innovative designs and manufacturing methods for MOS transistors. One of his patents describes a MOS transistor that features a semiconductor layer resting on an insulator, with a substantially planar upper surface. This semiconductor layer extends to different depths in the channel region and the source and drain regions, utilizing a silicon on insulator substrate. Another patent outlines a method for manufacturing devices that incorporate both low-voltage and high-voltage MOS transistors. This method involves the formation of gate stacks over a semiconductor layer, with the strategic use of insulators to create raised source-drain structures.

Career Highlights

Throughout his career, Gregory Bidal has worked with leading companies in the semiconductor industry, including STMicroelectronics and NXP B.V. His experience in these organizations has allowed him to refine his expertise in MOS technology and contribute to groundbreaking advancements.

Collaborations

Bidal has collaborated with notable colleagues such as Nicolas J. Loubet and Dominique Golanski. These partnerships have fostered a collaborative environment that has led to innovative solutions in semiconductor design and manufacturing.

Conclusion

Gregory Bidal's contributions to MOS transistor technology exemplify his dedication to innovation in the semiconductor field. His patents and collaborations reflect a commitment to advancing technology and improving device performance.