The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 16, 2012
Filed:
Mar. 11, 2009
Gregory Bidal, Eindhoven, NL;
Frederic Boeuf, Eindhoven, NL;
Nicolas Loubet, Eindhoven, NL;
NXP B.V., Eindhoven, NL;
ST MicroElectronics (Crolles 2) SAS, Crolles, FR;
Abstract
The present invention relates to a method for position-controlled fabrication of a semiconductor quantum dot, the method comprising: providing a substrate () of a substrate material; depositing a sacrificial layer () of a sacrificial material; depositing an active layer () of a semiconductive active material on the sacrificial layer, wherein the substrate, sacrificial and active materials are chosen such that the sacrificial layer is selectively removable with respect to the substrate and the active layer, depositing and patterning a mask layer on the active layer so as to define desired quantum-dot positions in lateral directions, fabricating a lateral access to the sacrificial layer in regions underneath the patterned mask layer; selectively removing, with respect to the substrate and the active layer, the sacrificial layer from underneath the active layer at least under the patterned mask layer; and etching the active layer under the patterned mask layer from underneath the active layer so as to assume a desired quantum-dot shape.