The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 12, 2013
Filed:
Jan. 20, 2009
Gregory F. Bidal, Grenoble, FR;
Fabrice A. Payet, Sainte Suzanne, FR;
Nicolas Loubet, Guilderland, NY (US);
Gregory F. Bidal, Grenoble, FR;
Fabrice A. Payet, Sainte Suzanne, FR;
Nicolas Loubet, Guilderland, NY (US);
NXP B.V., Eindhoven, NL;
Abstract
The present invention relates to method for fabricating a dual-orientation group-IV semiconductor substrate and comprises in addition to performing a masked amorphization on a DSB-like substrate only in first lateral regions of the surface layer, and a solid-phase epitaxial regrowth of the surface layer in only the first lateral regions so as to establish their (100)-orientation. Subsequently, a cover layer on the surface layer is fabricated, followed by fabricating isolation regions, which laterally separate (11θ)-oriented first lateral regions and (100)-oriented second lateral regions from each other. Then the cover layer is removed in a selective manner with respect to the isolation regions so as to uncover the surface layer in the first and second lateral regions and a refilling of the first and second lateral regions between the isolation regions is performed using epitaxy.