Essex Junction, VT, United States of America

Glen L Miles

This inventor holds 18 USPTO granted patents, primarily in Semiconductor Fabrication. Top assignees: International Business Machines Corporation, Other. Active years: 1991-2012.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Glen L Miles. Retrieved from https://idiyas.com/inventor/glen-l-miles

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 18

% Patents Active = 77.8

Average Co-Inventor Count = 4.0

ph-index = 6

Forward Citations = 244(Granted Patents)

Location History:

South Burlington, VT (US) (1991)
Essex Junction, VT (US) (1996 - 2010)
Hopewell Junction, NY (US) (2012)

Company Filing History:

17 out of 166,409

International Business Machines Corporation

patents

1 out of 834,570

Other

patents

Years Active: 1991-2012

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Areas of Expertise:

Through Silicon Vias

CMOS Transistor

Polysilicon Gate

Silicide Resistor

Contact Barrier

Dopant Segregation

Low Resistivity

NVRAM Cell

Temperature Measurement

Floating Gate

Damascene Process

Phase Transformation

18 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 8136084 - Arranging through silicon vias in IC layout (2012-03-13),

2. 7714366 - CMOS transistor with a polysilicon gate electrode having varying grain size (2010-05-11),

3. 6893948 - Method of reducing polysilicon depletion in a polysilicon gate electrode by depositing polysilicon of varying grain size (2005-05-17),

4. 6853032 - Structure and method for formation of a blocked silicide resistor (2005-02-08),

5. 6670263 - Method of reducing polysilicon depletion in a polysilicon gate electrode by depositing polysilicon of varying grain size (2003-12-30),

6. 6660664 - Structure and method for formation of a blocked silicide resistor (2003-12-09),

7. 6509265 - Process for manufacturing a contact barrier (2003-01-21),

8. 6348419 - Modification of the wet characteristics of deposited layers and in-line control (2002-02-19),

9. 6250803 - Method for temperature measurement using dopant segregation into titanium silicide (2001-06-26),

10. 6235597 - Semiconductor structure having reduced silicide resistance between closely spaced gates and method of fabrication (2001-05-22),

11. 6187679 - Low temperature formation of low resistivity titanium silicide (2001-02-13),

12. 6180521 - Process for manufacturing a contact barrier (2001-01-30),

13. 6180456 - Triple polysilicon embedded NVRAM cell and method thereof (2001-01-30),

14. 6069040 - Fabricating a floating gate with field enhancement feature self-aligned (2000-05-30),

15. 6060358 - Damascene NVRAM cell and method of manufacture (2000-05-09),

Title: Glen L Miles - Pioneering Inventor from Essex Junction

Introduction: Glen L Miles is a distinguished inventor hailing from Essex Junction, Vermont. His innovative spirit and dedication to creating groundbreaking solutions have made him a notable figure in the world of patents and inventions.

Latest Patents: Glen L Miles holds several patents in various fields, showcasing his versatility and creativity in inventing new technologies to address modern challenges.

Career Highlights: Throughout his career, Glen L Miles has demonstrated a keen ability to identify gaps in the market and develop unique inventions to fill them. His contributions have not only improved existing technologies but have also opened up new possibilities in different industries.

Collaborations: Glen L Miles has collaborated with leading companies, research institutions, and universities to bring his inventions to life. These partnerships have been instrumental in turning his innovative ideas into tangible products that benefit society.

Conclusion: Glen L Miles's passion for innovation and his relentless pursuit of excellence have solidified his reputation as a pioneering inventor. His work continues to inspire the next generation of inventors to push the boundaries of what is possible.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]