The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 09, 2000
Filed:
Oct. 21, 1997
John A Bracchitta, South Burlington, VT (US);
Jeffrey B Johnson, Essex Junction, VT (US);
Glen L Miles, Essex Junction, VT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Recessing the floating gate of a NVRAM cell within a substrate or semiconductor layer between isolation structures permits manufacture by a simplified self-aligned process of high yield and economy while supporting maximum integration density and reducing or eliminating severe topography of the control gate connections which are formed in strips having a generally planar lower surface and which are of improved robustness and potentially fine pitch. Impurity implants are facilitated by thicknesses of various material present during portions of the process and in various combinations which may be advantageously exploited to obtain tailoring of impurity concentrations and profiles of both NVRAM cells and damascene field effect transistors formed by similar and compatible processes.