The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 13, 2001
Filed:
Feb. 26, 1997
Cyril Cabral, Jr., Ossining, NY (US);
Lawrence Alfred Clevenger, Lagrangeville, NY (US);
Francois Max d'Heurle, Ossining, NY (US);
James McKell Edwin Harper, Yorktown Heights, NY (US);
Randy William Mann, Jericho, VT (US);
Glen Lester Miles, Essex Junction, VT (US);
James Spiros Nakos, Essex, VT (US);
Ronnen Andrew Roy, Briarcliff Manor, NY (US);
Katherine L. Saenger, Ossining, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Low resistivity titanium silicide, and semiconductor devices incorporating the same, may be formed by titanium alloy comprising titanium and 1-20 atomic percent refractory metal deposited in a layer overlying a silicon substrate, the substrate is then heated to a temperature sufficient to substantially form C54 phase titanium silicide. The titanium alloy may further comprise silicon and the refractory metal may be Mo, W, Ta, Nb, V, or Cr, and more preferably is Ta or Nb. The heating step used to form the low resistivity titanium silicide is performed at a temperature less than 900° C., and more preferably between about 600-700° C.