Francois M d'Heurle

Title: Innovations of Francois M d'Heurle

Introduction

Francois M d'Heurle is a notable inventor based in Ossining, NY (US). He has made significant contributions to the field of semiconductor technology, holding a total of 7 patents. His work primarily focuses on the formation of low resistivity titanium silicide, which is crucial for enhancing the performance of semiconductor devices.

Latest Patents

One of his latest patents involves the low temperature formation of low resistivity titanium silicide. This process allows for the creation of titanium silicide and semiconductor devices that incorporate it. The method involves using a titanium alloy that comprises titanium and 1-20 atomic percent of a refractory metal, which is deposited in a layer over a silicon substrate. The substrate is then heated to a temperature sufficient to substantially form the C54 phase titanium silicide. The titanium alloy may also include silicon, and the refractory metal can be Mo, W, Ta, Nb, V, or Cr, with Ta or Nb being preferred. The heating step is performed at a temperature of less than 900°C, ideally between 600-700°C.

Career Highlights

Francois M d'Heurle is associated with the International Business Machines Corporation (IBM), where he has contributed to various innovative projects. His expertise in semiconductor technology has positioned him as a key figure in the development of advanced materials and processes.

Collaborations

Throughout his career, he has collaborated with notable colleagues, including Cyril Cabral, Jr. and Lawrence Alfred Clevenger. These collaborations have further enhanced the impact of his inventions in the semiconductor industry.

Conclusion

Francois M d'Heurle's contributions to semiconductor technology through his patents and collaborations highlight his importance as an inventor. His work continues to influence advancements in the field, particularly in the formation of low resistivity titanium silicide.