The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 26, 2001
Filed:
Jun. 08, 1999
Arne W. Ballantine, South Burlington, VT (US);
Glen L. Miles, Essex Junction, VT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method of measuring temperature of momentary anneals in the temperature range of around 900° C. is disclosed. The method comprises the steps of providing a substrate of doped polysilicon or single crystal silicon, applying a blocking layer on a portion of the substrate, selectively forming silicide on the substrate adjacent opposite ends of the blocking layer to define a resistor, subjecting the resistor to a momentary anneal in the temperature range around 900° C., and measuring interfacial resistance between the silicide and the substrate after the annealing step, the resistance correlating to anneal temperature.