Dallas, TX, United States of America

Glen D Wilk

This inventor holds 40 USPTO granted patents, primarily in Semiconductor Fabrication. Top assignees: Texas Instruments Corporation, Agere Systems Inc., Lucent Technologies Inc.. Active years: 2000-2007.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Glen D Wilk. Retrieved from https://idiyas.com/inventor/glen-d-wilk

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 97.5

Average Co-Inventor Count = 2.3

ph-index = 17

Forward Citations = 2,095(Granted Patents)


Location History:

  • Dallas, TX (US) (2000 - 2006)
  • New Providence, NJ (US) (2002 - 2007)

Company Filing History:


Years Active: 2000-2007

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Areas of Expertise:
High-K Dielectrics
Thin Film Deposition
Gate Structures
Silicon-Nitrogen Dielectrics
Hafnium Nitride
Silicate Materials
Nano-Rugged Layers
Crystalline Silicon
Integrated Circuit Capacitors
Resonant Tunneling Diodes
Chemical Vapor Deposition
Metal Oxide Dielectrics
40 patents (USPTO):Explore Patents

Title: Glen D. Wilk: Innovator in Semiconductor Technology

Introduction

Glen D. Wilk, based in Dallas, Texas, is a prominent inventor in the field of semiconductor technology, holding an impressive collection of 40 patents. His contributions have significantly impacted the industry, particularly in the development and fabrication of advanced semiconductor devices.

Latest Patents

Among his latest innovations are two noteworthy patents. The first is a "Method of Fabricating a Composite Gate Dielectric Layer," which describes a semiconductor device featuring a composite dielectric layer positioned between a silicon substrate and a gate electrode. This innovative layer comprises silicon oxide, SiO, with a dielectric constant ranging between 3.9 and 12 or less, alongside a complementary dielectric layer designed to minimize leakage current.

The second invention is related to a "Process for Fabricating a Semiconductor Device Having an Insulating Layer Formed Over a Semiconductor Substrate." This method outlines the production of a semiconductor device that includes an insulating layer, with a crucial seed layer formed on a silicon substrate. The seed layer is established by exposing a hydrogen-terminated silicon surface to a precursor in an oxygen-free environment, followed by the deposition of dielectric material.

Career Highlights

Glen has had a notable career, with significant tenure at leading technology firms like Texas Instruments Corporation and Agere Systems Inc. His background in these prestigious organizations has undoubtedly shaped his expertise and propelled his success as an inventor.

Collaborations

Throughout his career, Glen has collaborated with prominent professionals in the field, including coworkers Robert M. Wallace and John Mark Anthony. These partnerships have contributed to his innovative approach and the successful realization of his patents.

Conclusion

Glen D. Wilk's extensive array of patents in semiconductor technology underscores his status as a key figure in the industry. His work continues to influence advancements in the design and fabrication of semiconductor devices, further solidifying his legacy as an inventor committed to innovation.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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